Monolithic super-bright red resonant cavity light-emitting diodegrown by solid source molecular beam epitaxy |
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| Authors: | Jalonen M Kongas J Toivonen M Savolainen P Salokatve A Pessa M |
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| Affiliation: | Dept. of Phys., Tampere Univ. of Technol.; |
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| Abstract: | Monolithic super-bright resonant-cavity light-emitting diode operating at λ=663 nm has been developed. The diode consisted of a 1λ-thick AlGaInP active region sandwiched between AlAs-AlGaAs distributed Bragg reflectors. The device structure was grown by solid source molecular beam epitaxy. The current aperture of the emitter was created by lateral selective wet thermal oxidation. A record-high peak wall-plug efficiency of 2.2% and a continuous-wave output power of 1.4 mW were attained without heatsinking at room temperature from a diode having a diameter of 80 μm. The emission linewidth was as narrow as 4.5 nm |
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