Optimal doping of the drift region in unipolar diodes and transistors |
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Authors: | A. S. Kyuregyan |
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Affiliation: | (1) All-Russia Power Institute, Krasnokazarmennaya ul. 12, Moscow, 111250, Russia |
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Abstract: | An exact analytical solution to the problem of minimizing the drift-region resistance in high-power unipolar devices was obtained. It is shown that the optimal dopant profile N(x) features a minimum in the central part of the drift region and increases without restriction when either of the boundaries of this region are approached. |
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