An analytic model for high-electron-mobility transistors |
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| Affiliation: | 1. Department of Electrical and Computer Engineering and Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, Republic of Korea;2. School of Information Science and Engineering, Shenyang University of Technology, Shenyang 110870, China;1. STMicroelectronics, 850 rue Jean Monnet, BP 16, 38926 Crolles, France;2. IMEP-LAHC, Minatec/INPG, BP 257, 38016 Grenoble, France;1. Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, New Delhi 110021, India;2. Department of Physics, Motilal Nehru College, University of Delhi, New Delhi 110021, India;3. Department of Electronics and Communication Engineering, Maharaja Agrasen Institute of Technology, New Delhi 110086, India;1. Center of Excellence in Nanotechnology, King Fahd University of Petroleum & Minerals, Dhahran 31261, Saudi Arabia;2. Systems Engineering Departement, King Fahd University of Petroleum & Minerals, Dhahran 31261, Saudi Arabia;3. University Schools, Girls High School, Dhahran 31261, Saudi Arabia;4. Physics Department, King Fahd University of Petroleum and Minerals, Dhahran 31261, Saudi Arabia |
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| Abstract: | A new analytic model is developed for the output I–V characteristics and microwave-signal parameters of High Electron Mobility Transistors (HEMTs). In this model, the empirical formula suggested by Giblin et al. is used to approach the behavior of electron drift velocity vs electric field. The resulting I–V curves are in excellent agreement with experimental data. In order to predict the microwave performance of these devices, this model is also used to calculate the small-signal parameters, transconductance and gate capacitance, which are then used to estimate fT, the frequency of unity current gain. |
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