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Procedure for determination of a linear approximation doping profile in a MOS structure |
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| Affiliation: | 1. Department of Radiation Oncology, University of Rochester Medical Center, Rochester, New York;2. Department of Radiation Oncology, Beacon Hospital, Beacon Court, Sandyford, Dublin, Ireland;3. Department of Radiation Oncology, Case Western Reserve University School of Medicine, Cleveland, OH |
| Abstract: | A method for determination of a linear approximation doping profile in a semiconductor is presented. The procedure is based on measurement of the high frequency C-V characteristic of a MOS capacitor. The proposed approximation of doping profile is sufficiently accurate in practical cases and the method is fast. Hence it can be applied in MOS device modelling or routine MOS technology diagnostics. |
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