|
|||||
|
|
Noise characteristics of ionizing-radiation-stressed MOSFET devices |
|
| Affiliation: | RIT Research Corporation 75 Highpower Road Rochester, NY 14623-3435, U.S.A.;Department of Electrical Engineering Rochester Institute of Technology 1 Lomb Memorial Drive Rochester, NY 14623, U.S.A. |
| Abstract: | |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ | |