Theoretical analysis of charge transfer in thin-film charge-coupled devices |
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| Affiliation: | 1. Xerox Webster Research Center, Webster, NY 14580, U.S.A.;1. Research Center for New Energy Technology (RCNET), Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Jiading 201800, Shanghai, China;2. Zhongwei New Energy (Chengdu) Co., Ltd., Chengdu 610200, China;3. University of Chinese Academy of Sciences (UCAS), Shijingshan, 100049 Beijing, P. R. China;4. School of Physical Science and Technology, ShanghaiTech University, 201210, Shanghai, China;1. Key Laboratory of Solar Thermal Energy and Photovoltaic System of Chinese Academy of Sciences, Institute of Electrical Engineering, The Chinese Academy of Sciences, Beijing, 100190, China;2. University of Chinese Academy of Sciences, Beijing, 100049, China;3. Anhui Huasun Energy Co., Ltd, Xuancheng, 242000, China |
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| Abstract: | The charge-transfer process in thin-film charge-coupled devices made from, e.g. hydrogenated amorphous silicon (a-Si:H) is analysed mathematically. This analysis considers the spatial coordinate in the transfer direction explicitly, while, by making use of the thin film feature, it is formulated as a quasi 1-D problem. In agreement with previous work, it is found that the thickness of the active layer influences the deleterious effect of localized states. However, it is shown that for a realistic distribution of localized states in undoped a-Si:H, the transfer inefficiency can approach the ultimate trap-free case when the active layer thickness is reduced to below 0.1 μm. Such a device can be operated at a frequency of slightly less than 100 kHz. |
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