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Optical characterization of heavily doped silicon |
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| Affiliation: | 1. Departamento de Física de la Materia Condensada, Universidad de Cádiz, Spain;2. Departamento de Matemáticas, Universidad de Cádiz, Spain;3. College of Energy and Electronics, Technical University of Sofia, Bulgaria;4. Department of Microelectronics, Technical University of Sofia, Bulgaria;1. Jiangsu Key Laboratory of Spectral Imaging and Intelligent Sense, Nanjing University of Science and Technology, Nanjing 210094, China;2. Shanghai Institute of Spaceflight Control Technology, Shanghai 201109, China;3. Xi''an Institute of Applied Optics, Xi''an 710065, China |
| Abstract: | Out of a variety of optical techniques used to characterize heavily doped semiconductors photoluminescence and Raman spectroscopy will be discussed as tools to study heavy doping effects. Photoluminescence spectroscopy is sensitive to electronic transitions between the conduction and valence band whereas electronic Raman scattering probes transitions within either band. Parameters relevant to device physics such as the band gap shrinkage due to heavy doping are extracted from these measurements. It is further shown that both techniques are applicable to the characterization of thin heavily doped implanted or epitaxial layers. |
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