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Emitter injection efficiency in heterojunction bipolar transistors |
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| Affiliation: | 1. Plasma Physics Division, Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC 20375-5346, USA;2. Materials Science and Technology Division, Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC 20375-5346, USA;3. IBM T.J. Watson Research Center, 1101 Kitchawan Rd, Yorktown Heights, New York 10598, USA |
| Abstract: | Experimental approaches for measurement of the emitter injection efficiency in heterojunction bipolar transistors are discussed. The electron and hole currents crossing the base-emitter junction and the currents recombining within the quasi-neutral emitter and base region are also determined. The influence of the interface and space-charge region recombination is discussed qualitatively. New figures of merit for a bipolar transistor are introduced. Preliminary experimental results obtained on AlGaAs/GaAs transistors are presented. |
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