Performance analysis of sub-micron gate GaAs MESFETs |
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| Affiliation: | 1. Department of Electronics and Communications, Faculty of Engineering, Cairo University, Cairo, Giza, Egypt;2. Centre Hyperfréquences et Semiconducteurs, Université des Sciences et Techniques de Lille, 59655 Villeneuve d''Ascq Cedex, France;1. Functional and Renewable Energy Materials Laboratory, Indian Institute of Technology Ropar, Punjab 140001, India;2. Indian Institute of Technology Mandi, Himachal Pradesh 175005, India;1. Department of Physics, National University of Singapore, Singapore 117542, Singapore;2. SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China;3. Department of Chemistry, National University of Singapore, Singapore 117543, Singapore;4. Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China;5. National University of Singapore (Suzhou) Research Institute, Suzhou, 215123, China;1. Department of Physics, Yonsei University, Seoul 03722, Republic of Korea;2. Division of Physics and Semiconductor Science, Dongguk University, Seoul, Republic of Korea;3. Department of System Semiconductor Engineering, Yonsei University, Seoul 03722, Republic of Korea;1. State Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing 210023, PR China;2. Department of Industrial and Systems Engineering, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, PR China;3. Institute of Nanoc hemistry and Nanobiology, Shanghai University, Shanghai 200444, PR China;1. Institute of Optoelectronics, Fudan University, Shanghai 200438, People’s Republic of China;2. Frontier Institute of Chip and System, Fudan University, Shanghai 200438, People’s Republic of China;3. Department of Materials Science, Fudan University, Shanghai 200433, People’s Republic of China;4. Zhangjiang Fudan International Innovation Centre, Fudan University, Shanghai 200438, People’s Republic of China;5. Shanghai Qi Zhi Institute, Shanghai 200232, People’s Republic of China |
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| Abstract: | A novel 2-D numerical model incorporating nonstationary electron dynamics is used to investigate the complex transport phenomena governing the operation of sub-micron gate GaAs MESFET's. A detailed theoretical analysis of different phenomena observed in subhalf micron devices is given. These include velocity overshoot, stationary and travelling domain formation, soft pinch off, excess drain current etc. The small signal parameters gm, gd and Cgs and their dependence on bias condition are evaluated. The effects of physical quantities such as mobility and interface barrier on carrier injection and transport and consequently on device performance are presented. |
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