Silicon heterojunction bipolar transistors with amorphous and microcrystalline emitters |
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| Affiliation: | 1. Department of Electronics and Communication Engineering, Kalyani Government Engineering College, Nadia, West Bengal, 741235, India;2. Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India;1. Device Lab., Device and System Research Center, Samsung Advanced Institute of Technology, Suwon, Gyeonggi-Do 443-803, Republic of Korea;2. Department of Electronic Material Engineering, Korea Maritime and Ocean University, 727 Taejong-ro, Yeongdo-gu, Busan 49112, Republic of Korea;1. Department of Materials and Metallurgical Engineering, Amirkabir University of Technology (Tehran Polytechnic), Tehran 1591634311, Iran;2. Key Laboratory of Photovoltaic and Energy Conservation Materials, Institute of Applied Technology, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China;1. School of Microelectronics and Control Engineering, Jiangsu Collaborative Innovation Center for Photovoltaic Science and Engineering, Jiangsu Province Cultivation Base for State Key Laboratory of Photovoltaic Science and Technology, Changzhou University, Changzhou 213164, China;2. School of Materials Science and Engineering, Changzhou University, Changzhou 213164, China;3. Institute of Intelligent Flexible Mechatronics, Jiangsu University, Zhenjiang 212013, China |
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| Abstract: | The emitter Gummel number of bipolar transistors with an amorphous silicon emitter-base heterojunction is shown to be very large. The temperature dependence of the common-emitter current gain of such heterojunction bipolar transistors is much smaller than that of conventional homojunction transistors. With the actual technology the applicability of amorphous silicon emitters is limited by the emitter series resistance which is too high for VLSI applications. Microcrystalline silicon is a promising emitter material as it combines the high emitter efficiency of amorphous silicon emitters with a much lower resistivity, yielding lower emitter resistances. |
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