A finite-element model and characterization of the p-i-n magnetodiode at microwave frequencies |
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| Affiliation: | 1. Department of Electrical and Computer Engineering, Southeastern Massachusetts University, N. Dartmouth, MA 02747, U.S.A.;2. M/A-COM, South Avenue, Burlington, MA 01803, U.S.A.;1. Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry RAS, Chernogolovka 142432, Russia;2. Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 14170 Dolgoprudny, Russia;3. Russian Quantum Center, Skolkovo innovation city, Moscow 121205, Russia;1. Institute of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg 620026, Russia;2. Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, Ekaterinburg 620066, Russia;3. Institute of Fundamental Education, Ural Federal University, Ekaterinburg 620062, Russia |
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| Abstract: | A finite element, resistive network analog model is presented and applied to p-i-n magnetodiodes at a microwave frequencies. The network analog model is outlined and verified with microwave measurements on a mesa-style p-i-n diode. The microwave measurements, coupled with data obtained by the model, are shown to provide a measure of the ambipolar mobility in the i-region of the semiconductor device. The magnetosensitivity of the magnetodiode as a function of geometry is also discussed. |
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