Optical parameters of InP-based waveguides |
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| Affiliation: | 1. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, P.O. Box 72 (BUPT), 100876 Beijing, China;2. Photonics Research Centre, Department of Electronic and Information Engineering, Hong Kong Polytechnic University, Hung hom, Kowloon, Hong Kong, China;1. Department of Electronics Engineering, Chang Gung University, Taoyuan, Taiwan, ROC;2. Department of Electronics Engineering, Feng-Chia University, Taichung, Taiwan, ROC;1. Department of Photonics Engineering, Technical University of Denmark, Ørsteds Plads, 2800 Kgs. Lyngby, Denmark;2. ITMO University, St Petersburg, Russia;1. Laboratoire de Microphysique et de Nanophysique (LaMiN), ENP-Oran, BP 1523 El M''Naouer, Oran, 31000, Algeria;2. Département des Sciences de la Matière, Faculté des Sciences Exactes, Université Tahri Mohamed Béchar, BP 417 Rue de Kanadissa, 08000, Bechar, Algeria |
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| Abstract: | The quaternary alloys InGaAsP, matched in their lattice constant to InP, are considered in view of optical-waveguide applications. The parameters, most important in this connexion, are the refractive index n and the optical absorption coefficient α. Both are calculated starting from quantities relevant to the binary constituents of the system InGaAsP. The results are compared with the relatively few experiments reported in the literature. The calculations are applied to film and rectangular waveguides, showing that they are sufficiently low in loss for integrated-optics applications. |
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