Photocurrent multiplication in GaAs Schottky photodiodes |
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| Affiliation: | 1. Division of Materials Science, Department of Engineering Sciences and Mathematics, Luleå, Sweden;2. Department of Molecular Sciences and Nanosystems, Ca’ Foscari University of Venice, Italy;1. Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University, Torun, Poland;2. Engineering Department, University of Palermo, Palermo, Italy;1. Department of Molecular Sciences and Nanosystems, Ca’ Foscari University of Venice, Mestre-Venezia, Italy;2. Department of Environmental Sciences, Informatics and Statistics, Ca’ Foscari University of Venice, Mestre-Venezia, Italy |
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| Abstract: | Many attempts have been made to build fast, sensitive photodetectors which offer simple fabrication and ease of integration. Regarding this view, GaAs Schottky barrier photodiodes seem to be ideally suited for use in the near-infrared region. The fabrication of GaAs Schottky photodiodes and the investigation of their properties (mainly photocurrent multiplication) are presented in this paper. A photocurrent gain of 104 was achieved and dependences of gain on incident power level and position were observed. |
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