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Effect of growth temperature on structure and optical characters of NiO films fabricated by PA-MOCVD |
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| Authors: | H. Wang Guoguang WuX.P. Cai Y. ZhaoZ.F. Shi J. WangX.C. Xia X. DongB.L. Zhang Y. Ma G.T. Du |
| Affiliation: | a State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China b College of Physics and Engineering, Henan University of Science and Technology, Luoyang 471003, China c School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116023, China |
| Abstract: | We report the effect of growth temperature on structure, optical and electrical properties of NiO films fabricated by Photo-assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD). It is found that the crystal quality of the NiO films has been improved by increasing the growth temperature. When the temperature is low, the NiO film is composed of small and anomalous grains, whereas the film is composed of grains with a cubic shape following the NaCl-type structure when the temperature is higher. The samples marked A-D under the growth temperature of 510, 540, 570 and 600 °C have optical band gap values of 3.93 eV, 3.82 eV, 3.73 eV and 3.55 eV, respectively. Comparatively, the controllable electrical properties of the films can be achieved by the variation of crystal quality arises from the growth temperature. |
| Keywords: | NiO MOCVD Growth temperature |
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