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Hole Mobility in Poly (N-vinylcarbazole) Thin Film Based on Silicium
引用本文:CHEN Baijun,WANG Xiaowei ③,LIU Shiyong. Hole Mobility in Poly (N-vinylcarbazole) Thin Film Based on Silicium[J]. 半导体光子学与技术, 1997, 0(4)
作者姓名:CHEN Baijun  WANG Xiaowei ③  LIU Shiyong
作者单位:State Key Lab.on Integrated Optoelectronics,Jilin University Region,Changchun,130023,CHN
摘    要:HoleMobilityinPoly(N-vinylcarbazole)ThinFilmBasedonSilicium①②CHENBaijun,WANGXiaowei③,LIUShiyong(StateKeyLab.onIntegratedOptoe...


Hole Mobility in Poly( N -vinylcarbazole) Thin Film Based on Silicium
Abstract:
Keywords:Mobility  Organic Semiconductor  Time of Flight
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