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基于数值模拟的太阳能直拉硅单晶热场降耗研究
引用本文:邓先亮,任忠鸣,邓康,吴亮. 基于数值模拟的太阳能直拉硅单晶热场降耗研究[J]. 稀有金属材料与工程, 2016, 45(11): 2907-2911
作者姓名:邓先亮  任忠鸣  邓康  吴亮
作者单位:上海大学,上海大学,上海大学,上海大学
摘    要:通过计算机数值模拟仿真技术分析了TDR-95A-ZJS型22英寸太阳能直拉硅单晶热场结构中影响能耗的主要因素。基于模拟结果提出了通过改变部分热场结构及保温毡布局等优化措施可有效降低原有热场功耗。实际生产实验表明,优化后的热场在保证晶体生长原有质量前提下较原有热场节能29%。

关 键 词:数值模拟;直拉硅单晶;热场;功耗  
收稿时间:2014-08-03
修稿时间:2014-08-29

The Study of Power Consumption on CzochralskiSilicon Single Crystal Growth Process for Photovoltaic through Numerical Simulat
dengxianliang,Ren Zhongming,Deng Kang and Wu Liang. The Study of Power Consumption on CzochralskiSilicon Single Crystal Growth Process for Photovoltaic through Numerical Simulat[J]. Rare Metal Materials and Engineering, 2016, 45(11): 2907-2911
Authors:dengxianliang  Ren Zhongming  Deng Kang  Wu Liang
Affiliation:Shanghai University,Shanghai University,Shanghai University,Shanghai University
Abstract:Factors influencing the heater power consumption on 22inch hotzone in TDR-95A-ZJS Czochrolaski crystal growth furnace for photovoltaic application are analyzed by means of numerical modeling and simulations. Based on numerical simulation results, hotzone optimization through structure and graphite insulator layout modifications targeted for heater power reduction is proposed. Physical crystal growthexperiments show that the heater power consumption is reduced by 29% after hotzone optimization while the crystal quality remains very similar to the ones obtained by original hotzone.
Keywords:Numerical simulation  Silicon single crystal  Power consumption  Hotzone  Czochralski
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