A novel technique for profiling the lateral n- dopingconcentrations of submicron LDD MOS devices |
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Authors: | Chung SS Shui-Ming Cheng Lee RG-H Song-Nian Kuo Mong-Song Liang |
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Affiliation: | Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu; |
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Abstract: | This paper reports a simple I-V method for the first time to determine the lateral lightly-doped source/drain (S/D) profiles (n- region) of LDD n-MOSFETs. One interesting result is the direct observation of the reverse-short-channel effect (RSCE). It is observed that S/D n- doping profile is channel length dependent if reverse short-channel effect exists as a result of the interstitial imperfections caused by Oxide Enhanced Diffusion (OED) or S/D implant. Not only the lateral profiles for long-channel devices but also for short-channel devices can be determined. One other practical application of the present method for device drain engineering has been demonstrated with a LATID MOS device drain engineering work. It is convincible that the proposed method is well suited for the characterization and optimization of submicron and deep-submicron MOSFETs in the current ULSI technology |
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