On the InGaP/GaAs/InGaAs camel-like FET for high-breakdown,low-leakage, and high-temperature operations |
| |
Authors: | Wen-Chau Liu Kuo-Hui Yu Kun-Wei Lin Jung-Hui Tsai Cheng-Zu Wu Kuan-Po Lin Chih-Hung Yen |
| |
Affiliation: | Dept. of Electr. Eng., Cheng Kung Univ., Tainan ; |
| |
Abstract: | A new field-effect transistor using a high-barrier n+ -GaAs/p+-InGaP/n-GaAs camel-like gate and GaAs/InGaAs heterostructure-channel has been fabricated successfully and demonstrated. Experimentally, an ultra high gate-drain breakdown voltage of 52 V, a high drain-source operation voltage over 20 V with low leakage currents, and a high drain-source off-state breakdown voltage of 39.7 V are obtained for a 1×100 μm2 device. The high breakdown behavior is attributed to the use of high barrier camel-like gate and heterostructure channels to reduce the undesired leakage current. Furthermore, the studied device also shows high breakdown behavior in a high temperature environment and good microwave characteristics. Therefore, based on these characteristics, the studied device is suitable for high-breakdown, low-leakage, and high-temperature applications |
| |
Keywords: | |
|
|