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AlGaInP/GaInAs strained quantum well lasers |
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| Authors: | Yoshida I Katsuyama T Hashimoto J Hayashi H |
| Affiliation: | Sumitoma Electric Industries Ltd., Yokohama, Japan; |
| Abstract: | AlGaInP cladding layers have been applied for the first time to GaInAs strained quantum well lasers oscillating around 0.98 mu m. The device has lower threshold current and larger T/sub 0/ than a device with GaInP cladding layers. This was expected from a larger bandgap difference between active and cladding layers.< |
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