Plasma charging damage on MOS devices with gate insulator ofhigh-dielectric constant material |
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Authors: | Pei-Jer Tzeng Yi-Yuan Chang Kuei-Shu Chang-Liao |
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Affiliation: | Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu; |
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Abstract: | Plasma charging effects on the gate insulator of high-dielectric constant (k) material in MOS devices deserve to be investigated because of different trap-assisted conduction mechanisms. Plasma-induced degradation in gate-leakage current and time to breakdown is clearly observed in this work. MOS device with Si3N4 film seems to have smaller degradation of gate-leakage current while it suffers shorter time to breakdown as compared to Ta2O5 samples. For devices with Ta2O5 film, a larger physical thickness suffers more reliability degradation from plasma charging damage because of the richer traps. Thus, a smaller physical thickness of high-k dielectric film is favorable for sub-micron MOS devices of ULSI application |
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