| 低压铝箔交流腐蚀工艺研究 |
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| 引用本文： | 曾建皇,陈建军,莫蒙宇,刘伟强,陈国娣.低压铝箔交流腐蚀工艺研究[J].电子元件与材料,2008,27(2):48-50. |
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| 作者姓名： | 曾建皇 陈建军 莫蒙宇 刘伟强 陈国娣 |
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| 作者单位： | 深圳清华大学研究院,新材料与生物医药研究所,广东,深圳,518057;日丰(清远)电子有限公司,广东,清远,511517;深圳清华大学研究院,新材料与生物医药研究所,广东,深圳,518057;日丰(清远)电子有限公司,广东,清远,511517 |
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| 摘 要： | 考察了电解电容器用高纯铝箔在HCl-H2SO4-H3PO4混合酸体系中的交流腐蚀过程,综合配方和工艺两方面主要因素研究铝箔的交流扩面行为。结合SEM形貌分析,重点考察了前级电流密度、后级电流密度及腐蚀电量等对铝箔比容的影响,确定了最佳的低压铝箔交流腐蚀工艺,在2V化成,Cs达76×10–6F/cm2。
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| 关 键 词： | 电子技术 铝箔 交流腐蚀 低压 |
| 文章编号： | 1001-2028（2008）02-0048-03 |
| 收稿时间： | 2007-11-09 |
| 修稿时间： | 2007年11月9日 |
Study on AC etching process of aluminum capacitor foil for low voltage applications |
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| ZENG Jian-huang,CHEN Jian-jun,MO Meng-yu,LIU Wei-qiang,CHEN Guo-di.Study on AC etching process of aluminum capacitor foil for low voltage applications[J].Electronic Components & Materials,2008,27(2):48-50. |
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| Authors: | ZENG Jian-huang CHEN Jian-jun MO Meng-yu LIU Wei-qiang CHEN Guo-di |
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| Affiliation: | ZENG Jian-huang1,2,CHEN Jian-jun1,MO Meng-yu2,LIU Wei-qiang1,CHEN Guo-di2 (1. Center for Advanced Materials & Biotechnology,Research Institute of Tsinghua University in Shenzhen,Shenzhen 518057,Guangdong Province,China,2. Rifeng (Qingyuan) electronic company,Qingyuan 511517,China ) |
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| Abstract: | AC Etching of high purity aluminum foil was studied in HCl-H2SO4-H3PO4 hybrid acids and the investigation was focused on the electrolyte composition and etching process to study the effects on surface area enhancement. Specifically, the effects on aluminum foil capacitance of the initial stage current density, last stage current density and etching coulomb were investigated based on SEM techniques. An AC etching process of aluminum capacitor foil for low voltage applications is optimized. Cs is 76×10–6 F/cm2 formed at 20 V. |
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| Keywords: | electron technology aluminum capacitor foil AC etching low voltage |
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