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Chemical vapor deposition of copper–cobalt binary films |
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| Authors: | Shuo Gu Paolina Atanasova Mark J Hampden-Smith and Toivo T Kodas |
| Affiliation: | a Department of Chemical Engineering, University of New Mexico, Albuquerque, NM 87131, USA b Department of Chemistry, University of New Mexico, Albuquerque, NM 87131, USA |
| Abstract: | Chemical vapor co-deposition of Cu–Co films has been demonstrated using (1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)Cu(II) Cu(hfac)2] hfac=hexafluoroacetylacetonate] and (acetylacetonate)Co(II) Co(acac)2] acac=acetylacetonate] as precursors. The deposition was performed at the substrate temperature of 270°C in a warm-wall impinging jet type reactor. The precursor Co(acac)2 was sublimed at 140°C to achieve reasonable precursor delivery rates and avoid decomposition of precursor in the sublimator. Films with varying Cu content from 17 wt.% to 98 wt.% were deposited by subliming Cu(hfac)2 in the temperature range of 40–100°C with a fixed Co(acac)2 delivery rate. The morphologies and crystallinities of the binary films were strongly dependent on the film stoichiometry. Overall, this study provides insights into the mechanism of Cu–Co binary film formation by CVD. |
| Keywords: | Chemical vapor deposition Copper–cobalt films Stoichiometry |
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