Photoelectric and X-ray dosimetric properties of TlGa0.97Mn0.03S2 single crystals

It is established that the partial substitution of gallium for manganese (3 mol %) in TlGaS₂ single crystals leads to a decrease in width of the band gap (from 2.62 to 2.5 eV), broadening of the peak of intrinsic photocurrent, and appearance of a broad band of extrinsic photocurrent over the photon energy range hν = 1.7–2.4 eV. Upon the partial substitution Ga → Mn in TlGaS₂, the X-ray sensitivity coefficient increases significantly (by a factor of 24–57) within an irradiation dose of 0.75–78 R/min, and the current-dose characteristics of TlGa_0.97Mn_0.03S₂ have good reproducibility.