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绝缘栅双极晶体管驱动模块EXB841的应用
引用本文:陆建国,牛海风.绝缘栅双极晶体管驱动模块EXB841的应用[J].江苏电器,2009(5):31-32,49.
作者姓名:陆建国  牛海风
作者单位:常州工程职业技术学院;中国科学院西安光学精密机械研究所;
摘    要:针对绝缘栅双极晶体管(IGBT)的等效电路,阐述了IGBT允许承受的短路时间与饱和压降的关系。分析了功率模块IGBT驱动及保护问题,介绍了驱动模块EXB841的特点及其在应用中存在的问题,并给出了实际应用中的解决方法。通过40kVA、400Hz变频电源的研制应用,可以证明该方法具有很好的性能。

关 键 词:绝缘栅双极晶体管  驱动  变频电源  保护

Application of the Driving Module EXB841 for Insulated Gate Bipolar Transistor
Authors:LU Jian-guo  NIU Hai-feng
Affiliation:1 Changzhou Institute of Engineering Technology;Changzhou 213164;China;2 Xi'an Institute of Optics and Precision Mechanics of CAS;Xi'an 710119;China
Abstract:Aiming at the equivalent circuit of IGBT, the relationship between the supportable short-circuit time and saturation voltage drop was discussed in detail. Analysis was made to the problem of driving and protection for IGBT power driving module. Introduction was made to the characteristics of drivng module EXB841 and its existing problems in apllication, means of settlement in practical application given. By the manufacture and application of 40 kVA variable frequency power supply at 400 Hz, it is proved tha...
Keywords:insulated gate bipolar transistor  driver  variable frequency power supply  protection  
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