Electronic Energy Levels in High-Temperature Superconductors |
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Authors: | H. P. Roeser D. T. Haslam J. S. López M. Stepper M. F. von Schoenermark F. M. Huber A. S. Nikoghosyan |
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Affiliation: | (1) Materials Science Laboratory, Department of Physics, Quaid-i-Azam University, Islamabad, Pakistan;(2) National Physical and Standard Laboratories, 16 H-9, Islamabad, Pakistan |
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Abstract: | Parent materials of high-temperature superconductors (HTSC) need to be doped to become superconducting. The optimum doping for maximum critical transition temperature T c has been analyzed for more than 20 materials. Assuming a uniform doping distribution the distance x between doped unit cells—projected into the CuO2 plane for cuprates—shows a strong linear correlation to the inverse of T c in the form (2x)2=m 11/T c with a slope of m 1=(2.786±0.029)×10−15 m2 K. The mercury cuprate homologous series HgBa2Ca n−1Cu n O2n+2+δ with n=1,2,3 has been used to demonstrate the procedure deriving the doping distance x from the optimum doping value δ. |
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