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Electronic Energy Levels in High-Temperature Superconductors
Authors:H. P. Roeser  D. T. Haslam  J. S. López  M. Stepper  M. F. von Schoenermark  F. M. Huber  A. S. Nikoghosyan
Affiliation:(1) Materials Science Laboratory, Department of Physics, Quaid-i-Azam University, Islamabad, Pakistan;(2) National Physical and Standard Laboratories, 16 H-9, Islamabad, Pakistan
Abstract:Parent materials of high-temperature superconductors (HTSC) need to be doped to become superconducting. The optimum doping for maximum critical transition temperature T c has been analyzed for more than 20 materials. Assuming a uniform doping distribution the distance x between doped unit cells—projected into the CuO2 plane for cuprates—shows a strong linear correlation to the inverse of T c in the form (2x)2=m 11/T c with a slope of m 1=(2.786±0.029)×10−15 m2 K. The mercury cuprate homologous series HgBa2Ca n−1Cu n O2n+2+δ with n=1,2,3 has been used to demonstrate the procedure deriving the doping distance x from the optimum doping value δ.
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