Low threshold 1.55 ?m InGaAsP lasers double clad with InGaAsP confining layers |
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| Authors: | Westbrook L.D. Nelson A.W. Hatch C.B. |
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| Affiliation: | British Telecom Research Laboratories, Ipswich, UK; |
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| Abstract: | Preliminary results for 1.55 ?m InGaAsP double-heterostructure lasers with symmetrical InGaAsP confining layers are presented. The lowest broad-area threshold is 1.36 kA/cm2, which is 30% lower than the best value previously reported for 1.55 ?m lasers. This improvement is believed to be related to the absence of terracing on InGaAsP confining layers. |
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