圆简支中心集中载荷下硅片的抗弯强度

本文采用圆筒支中心集中载荷法测定硅片的抗弯强度。通过薄板线弹性应力和中面薄膜应力相叠加的近似方法,求得硅片中心弯曲应力公式。并依据载荷-挠度曲线的线性区,从实验测定硅片的E值,测定了经过几种不同加工处理的硅片所具有的抗弯强度,并求出Weibull统计平均值。

The Bending Stress of Silicon Wafer on Simply Circulor Support at the Concentrated Central Load

The theortical expression of silicon wafer bending stress at the center of the plate is obtioned based on a approximate method of adding the membrane stress in the neutral surface to the linear elastic stress of the thin plate. The Young's modulus for 111] crystal surface of silicon wafer are determined experimemttally by the load-deflection curves. The agreement between ted-predic values and experimental data of stress is found to be good. Finally, the bending stresses of the silicon wafers proceesed in several ways are measured and the mean weibull statistical values are found.