7.1 GHz bandwidth monolithically integratedIn0.53Ga0.47As/In0.52Al0.48As PIN-HBT transimpedance photoreceiver |
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| Authors: | Cowles J Gutierrez-Aitken AL Bhattacharya P Haddad GI |
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| Affiliation: | Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI; |
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| Abstract: | A monolithically integrated photoreceiver using an InAlAs/InGaAs HBT-based transimpedance amplifier has been fabricated and characterized. The p-i-n photodiode is implemented using the base-collector junction of the HBT. The 5 μm×5 μm emitter area transistors have self-aligned base metal and non-alloyed Ti/Pt/Au contacts. Discrete transistors demonstrated fT and fmax of 54 GHz and 51 GHz, respectively. The amplifier demonstrated a -3 dB transimpedance bandwidth of 10 GHz and a gain of 40 dBΩ. The integrated photoreceiver with a 10 μm×10 μm p-i-n photodiode showed a -3 dB bandwidth of 7.1 GHz |
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