Design of 20 GHz high performance LC-VCOs in a 52 GHz fT SiGe:C BiCMOS technology |
| |
| Authors: | José Cruz Nunez-Perez Jacques Verdier |
| |
| Affiliation: | a Centro de Investigación y Desarrollo de Tecnología Digital (CITEDI), Instituto Politécnico Nacional (IPN), Av. del Parque No. 1310, Mesa de Otay, Tijuana, Baja California, México, Tijuana 22510, Mexico
b Université de Lyon, INL, Institut des Nanotechnologies de Lyon, INSA-Lyon, CNRS. Bâtiment Blaise Pascal, 7 avenue Jean Capelle, Villeurbanne Cedex F-69621, France |
| |
| Abstract: | The design and analysis of fully integrated 20 GHz voltage controlled oscillators (VCOs) for low cost and low power communication system are presented in this paper. Two differential topographies have been studied: balanced Colpitts VCO and LC-VCO using a cross-coupled differential pair. We have focused on oscillation frequency, tuning range, phase noise, output power optimization and buffer stage specifications. SiGe:C hetero-junction bipolar transistors of a 52 GHz cut-off frequency have been used and produced via a monolithic BiCMOS technology. |
| |
| Keywords: | Voltage controlled oscillator BiCMOS Noises Phase noise |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
