Effect of post-growth rapid thermal annealing on bilayer InAs/GaAs quantum dot heterostructure grown with very thin spacer thickness |
| |
Authors: | S. Sengupta S. Chakrabarti |
| |
Affiliation: | Center for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology, Bombay, Mumbai 400076, Maharashtra, India |
| |
Abstract: | We have investigated the effect of post-growth rapid thermal annealing on self-assembled InAs/GaAs bilayer quantum dot samples having very thin barrier thickness (7.5-8.5 nm). In/Ga interdiffusion in the samples due to annealing is presumed to be controlled by the vertical strain coupling from the seed dots in bilayer heterostructure. Strain coupling from embedded seed QD layer maintains a strain relaxed state in active top islands of the bilayer quantum dot sample grown with comparatively thick spacer layer (8.5 nm). This results in minimum In/Ga interdiffusion. However controlled interdiffusion across the interface between dots and GaAs barrier, noticeably enhances the emission efficiency in such bilayer quantum dot heterostructure on annealing up to 700 °C. |
| |
Keywords: | A. Nanostructures Semiconductors B. Epitaxial growth C. Electron microscopy D. Optical properties |
本文献已被 ScienceDirect 等数据库收录! |