| 阳极氧化Al_2O_3膜/InP和自身氧化膜/InP的界面性质 |
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| 引用本文： | 吴征,周炳林,张洪方,郭康瑾,杜根娣.阳极氧化Al_2O_3膜/InP和自身氧化膜/InP的界面性质[J].固体电子学研究与进展,1986(2). |
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| 作者姓名： | 吴征 周炳林 张洪方 郭康瑾 杜根娣 |
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| 作者单位： | 中国科学院上海冶金研究所
(吴征，周炳林，张洪方，郭康瑾)，中国科学院上海冶金研究所(杜根娣) |
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| 摘 要： | 研究了用阳极氧化法制备的Al_2O_3膜/InP和自身氧化膜/InP两种MIS结构的组分分布和电学性质,AES、I-V、C-V和DLTS等测试结果表明,Al_2O_3/InP结构的性能更为优越.用DLTS方法发现这两类样品都具有峰值能量为Ec-Es=0.5eV、俘获截面为～10~(-15)cm~2的连续分布的界面电子陷阱.认为该电子陷阱与磷空位缺陷有关.
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The Properties of Anodic Oxide AI_2O_3/lnP and Native Oxide/lnP Interfaces |
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| Abstract: | The composition profile and electrical properties of anodic oxide Al2O3/InP and native oxide/InP MIS structures were studied. A variety of measurements, such as AES, I-V, C-V and DLTS, were performed, showing that the Al2O3/InP structure is better than that of oxide/InP. It has been discovered by DLTS that the two kinds of samples exhibit continuously-distributed interface electron traps with a peak energy of Ec-Es = 0.5eV and a capture cross-section of-10-15cm2. We consider that the peak energy is probably related to the defect of P vacancy. |
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