Strained layer InxGa1-xAs/GaAs and InxGa1-xAs/InyGa1-yPmultiple-quantum-well optical modulators grown by gas-source MBE |
| |
| Authors: | Kim J.W. Chen C.W. Vogt T.J. Woods L.M. Robinson G.Y. Lile D.L. |
| |
| Affiliation: | Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO; |
| |
| Abstract: | The first results on low-power p-i-n diode modulator structures using strained multiple quantum wells (MQW's) of InGaAs/InGaP grown by gas-source molecular beam epitaxy (MBE) on GaAs are presented. A comparison of transmission, reflection, and photocurrent spectra for these nonresonant devices with those fabricated from InGaAs/GaAs indicates larger modulation, with a maximum change in reflection of >42% observed at 5-V bias at a wavelength of 0.96 μm |
| |
| Keywords: | |
|
|
