| 化合物半导体近红外光荧光测试中的布里渊散射 |
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| 引用本文： | 丁国庆.化合物半导体近红外光荧光测试中的布里渊散射[J].功能材料与器件学报,2000,6(4):342-345. |
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| 作者姓名： | 丁国庆 |
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| 作者单位： | 武汉电信器件公司,武汉,430074 |
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| 摘 要： | 报告了ＩｎＧａＡｓＰ／ＩｎＰ异质体材料光荧光测试中的受激布里渊散射，实验表明，该类材料在温度为２０－１５０Ｋ，光入射功率为４．５－６．０ｍＷ，观测到光荧光谱（ＰＬＳ）中强度和频移对移的多声子伴线，并讨论了它们的特性。
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| 关 键 词： | 布里渊散射 化合物半导体 近红外光荧光测试 |
| 修稿时间： | : |
Stimulated Brillium Scattering of the compound semiconductors in testing the near-intrared photoluminescence |
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| DING Guo-qing.Stimulated Brillium Scattering of the compound semiconductors in testing the near-intrared photoluminescence[J].Journal of Functional Materials and Devices,2000,6(4):342-345. |
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| Authors: | DING Guo-qing |
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| Abstract: | The stimulated Brillium Scattering of InGaAsP/InP heterostructure bulk materials in testing the near-infrared photoluminescence has been first reported. It showed as a matter of experience that as the temperature of the tested material is the rang of 20K to 150K, and the input optical power is 4.5 mW to 6.0 mW, the symmetrical in frequency-drift and in optical power, multiple-phonon accompanied rays in the photoluminescence spectrum may be observed. |
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| Keywords: | Brillium Scattering Phonon accompanied ray Heterostructure bulk materia$ |
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