New selfalignment processes for amorphous silicon thin film transistors with polysilicon source and drain |
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| Authors: | Sugiura O. Kim C.-D. Matsumura M. |
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| Affiliation: | Tokyo Inst. of Technol., Japan; |
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| Abstract: | New fabrication processes for selfaligned amorphous silicon TFTs are proposed. The TFTs have a polysilicon source and drain which are formed by ArF excimer laser annealing. They exhibit a field-effect mobility of 0.8 cm/sup 2//Vs, threshold voltage of 11 V, and on/off current ratio of higher than 10/sup 6/.<> |
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