硅基底电子束蒸发铝膜阳极氧化特性

研究了硅衬底上电子束蒸发铝膜 ,在 H2 SO4 水溶液中阳极氧化形成硅衬底多孔氧化铝复合结构的过程 .硅衬底电子束蒸发铝膜的阳极氧化过程主要由多孔氧化铝的生长、氧化铝生长向氧化硅生长的过渡和氧化硅生长三个阶段构成 .硅衬底多孔氧化铝复合结构的透射电子显微镜观察表明 ,在硅衬底上形成了垂直于硅表面的氧化铝纳米孔 ,而孔底可形成 Si O2 层 .有序结构多孔氧化铝的形成不依赖于铝膜的结晶状态 ,而是由阳极氧化过程的自组织作用所决定的 .实验表明将多孔氧化铝制备工艺移植到硅基衬底上直接形成硅基衬底多孔氧化铝复合结构是可行的

Anodie Characteristic During Anodizing of Electron-beam Evaporation Aluminum Film on Si Substrate

The porous anodizing process of aluminum film deposited by electron beam evaporation on Si substrate is studied. It is found that three stages are involved in the process, i.e. formation of porous alumina, transition stage from alumina growth to oxidation of Si and further oxidation of Si. Cross|sectional TEM analysis of the samples shows nanopore arrays have been fabricated on Si substrate separated by a thin SiO-2 layer. Moreover, studies suggest that the ordered pore structure of the alumina film can be formed by self|organization process in a noncrystalline aluminum film. It is possible to transplant the fabrication technology of porous alumina to Si substrate, which can provide a new template for fabrication of Si|based nanostructure materials.