Electrical properties of Si:Er/Si layers grown by sublimation molecular-beam epitaxy |
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| Authors: | O. V. Belova V. N. Shabanov A. P. Kasatkin O. A. Kuznetsov A. N. Yablonskiĭ M. V. Kuznetsov V. P. Kuznetsov A. V. Kornaukhov B. A. Andreev Z. F. Krasil’nik |
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| Affiliation: | (1) Physicotechnical Research Institute, Nizhni Novgorod State University, Nizhni Novgorod, 603950, Russia;(2) Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia |
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| Abstract: | Temperature dependences of the concentration and electron Hall mobility in Si:Er/Sr epitaxial layers grown at T = 600°C and annealed at 700 or 900°C have been investigated. The layers were grown by sublimation molecular-beam epitaxy in vacuum (～10?5 Pa). The energy levels of Er-related donor centers are located 0.21–0.27 eV below the bottom of the conduction band of Si. In the range 80–300 K, the electron Hall mobility in unannealed Si:Er epitaxial layers was lower than that in Czochralski-grown single crystals by a factor of 3–10. After annealing the layers, the fraction of electron scattering from Er donor centers significantly decreases. |
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