Subgrain growth in Al and Al-1% Mn during annealing

The subgrain growth during annealing of cold-worked Al-1% Mn and Al(4N) has been measured in the temperature intervals 300 to 400° C and 100 to 200° C respectively. For Al-1%Mn the subgrain diameter showed a parabolic growth, while for Al the diameter gradually reached a constant value. The microstructural investigations which included in situ annealing in a high voltage electron microscope demonstrated that the operating mechanism for growth in the higher temperature range was collective migration of sub-boundary dislocations. In the lower temperature range extraction of dislocations was found to be the dominating mechanism, i.e. dislocations partly lying in the boundaries are pulled out by the stress field in the subgrain interior. The observed growth rates were consistent with models for these mechanisms presented in two previous papers.