Enhancement of high-temperature high-frequency performance ofGaAs-based FETs by the high-temperature electronic technique |
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Authors: | Narasimhan R. Sadwick L.P. Hwu R.J. |
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Affiliation: | Dept. of Electr. Eng., Utah Univ., Salt Lake City, UT; |
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Abstract: | This paper reports the effects of high temperature on high-frequency/high-speed field effect transistors (FETs), particularly GaAs-based MESFETs and HEMTs. The high-temperature electronic technique (HTET) was employed to stabilize and improve the performance of these devices at high temperatures. This work focuses on detailed high-temperature experiments of high-frequency scattering parameters of various transistors. Comparable gain level to that obtained at room temperature was achieved at elevated temperature through the use of the HTET |
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