Effects of enhanced nucleation on the growth and thermal performance of diamond films deposited on BeO by hot filament CVD technique |
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| Authors: | Zhi-ming Yu Mei Fang Zhu Xiao |
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| Affiliation: | (1) School of Materials Science and Engineering, Central South University, Changsha, 410083, China;(2) Laboratory of Functional Thin Film (Ministry of Education), Central South University, Changsha, 410083, China;(3) Key Laboratory of Nonferrous Metal Materials Science and Engineering (Ministry of Education), Central South University, Changsha, 410083, China |
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| Abstract: | A method of controlling the feeding concentration of methane was applied in a hot-filament chemical vapor deposition (HFCVD) in order to improve the nucleation of diamond on the beryllium oxide substrates. The nucleation density and the morphologies of diamond were investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM) while the thermal conductivities of substrates and the composites were detected by laser-diathermometer. The results show that the diamond thin film is in larger grain size with lower roughness when CH4 and H2 enter the chamber, respectively, rather than as a mixture, and the composites’ conductivity soared by 21%–31% compared with BeO substrates. At the conditions of separated gas entry, several projects with changes of the CH4 flux during depositing were designed to discuss the influence of CH4 concentration on diamond nucleation. The uniform and compact diamond thin films were acquired when the ratio of CH4:H2 at nucleation stage was in the range of 4%–8%. |
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| Keywords: | enhanced nucleation HFCVD diamond thin film BeO thermal conductivity |
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