Thermal conductivity and sound velocity measurements of plasma enhanced chemical vapor deposited a-SiC:H thin films |
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| Authors: | DB HondongwaLR Olasov BC Daly SW KingJ Bielefeld |
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| Affiliation: | a Vassar College, Physics and Astronomy Department, Poughkeepsie, NY 12604, USAb Intel Corporation, Logic Technology Development, Hillsboro, OR 97124, USA |
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| Abstract: | We report ultrafast optical measurements of the thermal conductivity and longitudinal sound velocity for a-SiC:H thin films deposited by plasma enhanced chemical vapor deposition (PECVD). Porous and non-porous films with mass densities ranging from 1.0-2.5 g/cm3 were obtained by intentionally varying the PECVD process conditions. The longitudinal sound velocities for these materials as determined by picosecond ultrasonics ranged from 2370 m/s to 10460 m/s, and the Young's modulus determined from the sound velocity measurements ranged from 5-200 GPa. Time domain thermoreflectance measurements determined the thermal conductivity to range from 0.0009 W/cmK to 0.042 W/cmK. |
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| Keywords: | Amorphous silicon carbide Plasma-enhanced chemical vapor deposition Thermal conductivity Sound velocity Young's modulus Picosecond ultrasonics Time-domain thermoreflectance |
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