Ordered ZnO/AZO/PAM nanowire arrays prepared by seed-layer-assisted electrochemical deposition |
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| Authors: | Yu-Min Shen Chih-Huang Pan Sheng-Chang Wang Jow-Lay Huang |
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| Affiliation: | aDepartment of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan;bDepartment of Mechanical Engineering, Southern Taiwan University, Tainan 710, Taiwan;cCenter for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan;dResearch Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan |
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| Abstract: | An Al-doped ZnO (AZO) seed layer is prepared on the back side of a porous alumina membrane (PAM) substrate by spin coating followed by annealing in a vacuum at 400 °C. Zinc oxide in ordered arrays mediated by a high aspect ratio and an ordered pore array of AZO/PAM is synthesized. The ZnO nanowire array is prepared via a 3-electrode electrochemical deposition process using ZnSO4 and H2O2 solutions at a potential of − 1 V (versus saturated calomel electrode) and temperatures of 65 and 80 °C. The microstructure and chemical composition of the AZO seed layer and ZnO/AZO/PAM nanowire arrays are characterized by field emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). Results indicate that the ZnO/AZO/PAM nanowire arrays were assembled in the nanochannel of the porous alumina template with diameters of 110–140 nm. The crystallinity of the ZnO nanowires depends on the AZO seed layer during the annealing process. The nucleation and growth process of ZnO/AZO/PAM nanowires are interpreted by the seed-layer-assisted growth mechanism. |
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| Keywords: | Porous alumina membranes Al-doped ZnO thin films ZnO nanowire arrays Seed-layer-assisted growth |
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