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The mechanical properties and resistivity of Au/NiCr/Ta multi-layered films on Si-(111) substrate
Authors:Wu Tang  Kewei XuJian Lu
Affiliation:
  • a State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
  • b State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
  • c Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hong Kong, China
  • Abstract:Au/NiCr/Ta multi-layered metallic films were deposited on Si substrate by magnetron sputtering at different substrate temperatures. The residual stress, hardness and resistivity were investigated as a function of substrate temperature by laser polarization phase shift technique, nanoindentation technique and four point probe method, respectively. The residual stress in as-deposited films at different substrate temperatures was tension with 385 MPa-606 MPa. Nanoindentation tests at shallow indentation depths (h ≤ t/4) where the hardness is reliable for metal films on hard substrate. Au film at deposition temperature 200 °C has the highest hardness 4.2 GPa. The resistivity in the deposited films reached the lowest value 3.1 μΩ.cm at substrate temperature 200 °C. The most interesting facts are that the hardness decreases with increasing residual stress and resistivity increases with increasing residual stress. The relationship of residual stress and resistivity may hint that there is a definite correlation between the mechanical properties and electrical properties in the metallic films.
    Keywords:Au/NiCr/Ta films  Residual stress  Hardness  Resistivity
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