High-rate deposition by microwave RPECVD at atmospheric pressure

The post-discharge of a microwave resonant cavity working at atmospheric pressure is used to enhance deposition of SiO_x thin films from HMDSO by chemical vapor deposition. Maximum static deposition rates are close to 150 μm h^− 1 for low power consumption per unit of coated width (~ 100 W/cm). Dynamic deposition rates are close to 3.5 nm m s^− 1. The distribution of the coating thickness is heterogeneous over an area of 150 × 90 mm². The influence of the main parameters of the process is systematically studied to show how the key reactions, i.e. gas phase synthesis of powders and surface deposition, are correlated.