Nanostructured tantalum nitride films as buffer-layer for carbon nanotube growth |
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| Authors: | C JinM Delmas P AubertF Alvarez T MinéaMC Hugon B Bouchet-Fabre |
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| Affiliation: | a Laboratoire de Physique des Gaz et des Plasmas (CNRS-UMR 8578), Univ Paris-Sud, Bat. 210, 91405 Orsay cedex, Franceb Laboratoire Francis Perrin, DSM/IRAMIS/SPAM (CNRS-URA 2453), CEA-Saclay, 91191 Gif sur Yvette cedex, Francec Institut d'électronique fondamentale (CNRS-UMR 8622), Univ Paris-Sud, Bât. 220, 91405 Orsay cedex, Franced UNICAMP, Instituto de Fisica “Gleb Wataghin”13081-970 Campinas, SP, CP 6165, Brazil |
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| Abstract: | Tantalum nitride (TaNx) films are usually used as barriers to the diffusion of copper in the substrate for electronic devices. In the present work, the TaNx coating plays an extra role in the iron catalyzed chemical vapor deposition production of carbon nanotubes (CNT). The CNTs were grown at 850 °C on TaNx films prepared by radio frequency magnetron sputtering. The correlation between the CNT morphology and growth rate, and the pristine TaNx film nature, is investigated by comparing the evolution of the nano-composition, roughness and nano-crystallinity of the TaNx films both after annealing and CVD at 850 °C. |
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| Keywords: | Material science Tantalum nitride Thin films Chemical vapor deposition Carbon nanotube Diffusion barrier |
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