Picosecond photodiffraction in semiconductor multiquantum wells and microcavities

We study the transient gratings photogenerated in the picosecond regime in three families of structures, namely : - structures of thickness in the order of one micron, including quantum wells (GaAs/GaAlAs, CdTe/ CdZnTe). A transmission modulation due to the electric field has been observed. We show that, in accordance with our calculations, this modulation is screened faster than 10 ps at a fluence of a few µJ/cm2. - A structure including GalnAs/GalnAsP MQWS in a cavity. This structure shows a top diffraction efficiency of 2.5 × 10-² at 1.55 µm for an energy of excitation in the order of 100 µJ/cm2. The diffraction efficiency exhibits several oscillations due to Fabry-Pårot effects. By introducing cavity effects in our model, we show that the diffraction efficiency is amplified by more than a factor 2 with respect to the no-cavity case. Calculations show that the diffraction efficiency may reach 6 × 10-² around 1.625 µm, for a front mirror reflectivity of 90 %. - Structures including bulk GaAs microcavities. The risetime is lower or in the order of 1 ps while the diffraction efficiency attains 1 %, with an average power of 4 mW (i.e. an energy of 2 µJ/cm²/pulse), compatible with a commutation of packets at 80 MHz.