| 一种积累型沟道的半超结结构绝缘栅双极型晶体管 |
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| 引用本文： | 李冰华,江兴川,李志贵,林信南. 一种积累型沟道的半超结结构绝缘栅双极型晶体管[J]. 半导体学报, 2013, 34(12): 124001-4 |
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| 作者姓名： | 李冰华 江兴川 李志贵 林信南 |
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| 基金项目： | Project supported by the Guangdong Science ＆ Technology Project （No. 2010B090400443）, the Shenzhen Science ＆ Technology Foun- dation （Nos. JC201005270276A, ZD2010061 10039A）, and the Longgang Science ＆ Technology Developing Foundation. |
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| 摘 要： | A high performance trench insulated gate bipolar transistor which combines a semi-superjunction struc- ture and an accumulation channel （sSJTAC-IGBT） is proposed for the first time. Compared with the TAC-IGBT, the new device not only retains the advantages of the accumulation channel, but also obtains a larger breakdown voltage （BV）, a faster turn-off speed and a smaller saturation current level while keeping the on-state voltage drop lower as the TAC-IGBT does as well. Therefore, the new structure enlarges the short circuit safe operating area （SCSOA） and reduces the energy loss during the turn-off process.
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| 关 键 词： | 绝缘栅双极型晶体管 结构 沟槽 堆积层 管具 控制 安全工作区 击穿电压 |
| 修稿时间： | 2013-06-09 |
A trench accumulation layer controlled insulated gate bipolar transistor with a semi-SJ structure |
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| Li Binghu,Frank X. C. Jiang,Li Zhigui and Lin Xinnan. A trench accumulation layer controlled insulated gate bipolar transistor with a semi-SJ structure[J]. Chinese Journal of Semiconductors, 2013, 34(12): 124001-4 |
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| Authors: | Li Binghu Frank X. C. Jiang Li Zhigui Lin Xinnan |
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| Affiliation: | The Key Laboratory of Integrated Microsystems, School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China;The Key Laboratory of Integrated Microsystems, School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China;The Key Laboratory of Integrated Microsystems, School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China;The Key Laboratory of Integrated Microsystems, School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China |
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| Abstract: | A high performance trench insulated gate bipolar transistor which combines a semi-superjunction structure and an accumulation channel (sSJTAC-IGBT) is proposed for the first time. Compared with the TAC-IGBT, the new device not only retains the advantages of the accumulation channel, but also obtains a larger breakdown voltage (BV), a faster turn-off speed and a smaller saturation current level while keeping the on-state voltage drop lower as the TAC-IGBT does as well. Therefore, the new structure enlarges the short circuit safe operating area (SCSOA) and reduces the energy loss during the turn-off process. |
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| Keywords: | accumulation channel|semi-superjunction structure|BV|SCSOA |
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