| r面蓝宝石衬底上生长的a面ZnO巨大的平面内光学各向异性 |
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| 引用本文： | 武树杰,陈涌海,秦旭东,高寒松,俞金玲,朱来攀,李远,时凯.r面蓝宝石衬底上生长的a面ZnO巨大的平面内光学各向异性[J].半导体学报,2013,34(12):122003-4. |
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| 作者姓名： | 武树杰 陈涌海 秦旭东 高寒松 俞金玲 朱来攀 李远 时凯 |
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| 基金项目： | 973 项目（2013CB619306 , 2012CB921304）;863项目（2011AA03A101）自然科学基金（No. 60990313） |
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| 摘 要： | 我们在室温下测量采用反射差分光谱测量了r面蓝宝石衬底上生长的a面氧化锌的平面内光学各向异性。由于a面氧化锌为C2v对称性,我们观察到在平行c轴的方向和垂直于c轴的方向存在巨大的平面内光学各向异性。在带隙处观察到了非常尖锐的跃迁振荡信号,这个信号来源于偏振相关的能带移动。激子跃迁产生了尖锐的线形。谱线的拟合和微分光谱给出了偏振相关的带隙能量。垂直于c轴和平行于c轴方向上的各向异性应变产生了巨大的平面内光学各向异性。介电函数模型给出了拟合的结果,估计了带隙附近的偏振度。
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| 关 键 词： | 氧化锌 平面内光学各向异性 反射差分光谱 |
Giant in-plane optical anisotropy of a-plane ZnO on r-plane sapphire |
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| Wu Shujie,Chen Yonghai,Qin Xudong,Gao Hansong,Yu Jinling,Zhu Laipan,Li Yuan and Shi Kai.Giant in-plane optical anisotropy of a-plane ZnO on r-plane sapphire[J].Chinese Journal of Semiconductors,2013,34(12):122003-4. |
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| Authors: | Wu Shujie Chen Yonghai Qin Xudong Gao Hansong Yu Jinling Zhu Laipan Li Yuan and Shi Kai |
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| Affiliation: | Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | We have measured the in-plane optical anisotropy (IPOA) of (1120) ZnO (a-plane) on (1012) sapphire (r-plane) by reflectance difference spectroscopy (RDS) at room temperature. Giant IPOA has been observed between the light polarized direction parallel and perpendicular to the c axis of ZnO, since the symmetry of a-plane is C2v. A sharp resonance has been observed near the fundamental band gap, which is induced by the polarization-depend band gap shift. The sharp line shape is attributed to the exciton transition. The spectra fitting and differential spectra indicate the polarization-depend band energies. The giant IPOA is possible enhanced by anisotropy strain along and perpendicular to the c axis in the a-plane. |
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| Keywords: | ZnO|in-plane optical anisotropy|reflectance difference spectroscopy |
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