| Ni(Pt) 锗硅化合物/Si1-xGex 接触电阻的测试 |
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| 引用本文： | 相文峰,刘琨,赵昆,钟寿仙.Ni(Pt) 锗硅化合物/Si1-xGex 接触电阻的测试[J].半导体学报,2013,34(12):123002-4. |
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| 作者姓名： | 相文峰 刘琨 赵昆 钟寿仙 |
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| 作者单位： | [1]College of Science, China University of Petroleum, Beijing 102249, China [2]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences,Beijing 100080, China |
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| 基金项目： | 中国自然科学基金；中国石油大学基础发展基金 |
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| 摘 要： | The electrical properties of Ni0.95Pt0.05-germanosilicide/Si1_xGex contacts on heavily doped p-type strained Sil-xGex layers as a function of composition and doping concentration for a given composition have been investigated. A four-terminal Kelvin-resistor structure has been fabricated by using the conventional com- plementary metal-oxide-semiconductor （CMOS） process to measure contact resistance. The results showed that the contact resistance of the Ni0.95Pt0.05-germanosilicide/Sil-xGex contacts slightly reduced with increasing the Ge fraction. The higher the doping concentration, the lower the contact resistivity. The contact resistance of the samples with doping concentration of 4×10^19 cm^-3 is nearly one order of magnitude lower than that of the sam- ples with doping concentration of 5 × 10^17 cm^-3. In addition, the influence of dopant segregation on the contact resistance for the lower doped samples is larger than that for the higher doped samples.
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| 关 键 词： | 互补金属氧化物半导体 晶体管 肖特基 接触电阻率 源极 底物 掺硼 Ni |
| 收稿时间： | 1/3/2013 12:00:00 AM |
Ni(Pt) germanosilicide contacts formed on heavily boron doped Si1-xGex substrates for Schottky source/drain transistors |
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| Xiang Wenfeng,Liu Kun,Zhao Kun and Zhong Shouxian.Ni(Pt) germanosilicide contacts formed on heavily boron doped Si1-xGex substrates for Schottky source/drain transistors[J].Chinese Journal of Semiconductors,2013,34(12):123002-4. |
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| Authors: | Xiang Wenfeng Liu Kun Zhao Kun and Zhong Shouxian |
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| Affiliation: | College of Science, China University of Petroleum, Beijing 102249, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;College of Science, China University of Petroleum, Beijing 102249, China;College of Science, China University of Petroleum, Beijing 102249, China;College of Science, China University of Petroleum, Beijing 102249, China |
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| Abstract: | The electrical properties of Ni0.95Pt0.05-germanosilicide/Si1-xGex contacts on heavily doped p-type strained Si1-xGex layers as a function of composition and doping concentration for a given composition have been investigated. A four-terminal Kelvin-resistor structure has been fabricated by using the conventional complementary metal-oxide-semiconductor (CMOS) process to measure contact resistance. The results showed that the contact resistance of the Ni0.95Pt0.05-germanosilicide/Si1-xGex contacts slightly reduced with increasing the Ge fraction. The higher the doping concentration, the lower the contact resistivity. The contact resistance of the samples with doping concentration of 4 × 1019 cm-3 is nearly one order of magnitude lower than that of the samples with doping concentration of 5 × 1017 cm-3. In addition, the influence of dopant segregation on the contact resistance for the lower doped samples is larger than that for the higher doped samples. |
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| Keywords: | specific contact resistivity|Ni(Pt) germanosilicide|Ge fraction|doping concentration |
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