On-chip matched 5.2 and 5.8 GHz differential LNAs fabricated using0.35 μm CMOS technology |
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Authors: | Runge K. Pehlke D. Schiffer B. |
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Affiliation: | Rockwell Sci. Center, Thousand Oaks, CA; |
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Abstract: | The authors have designed experimental 5.2 and 5.8 GHz low-noise amplifiers (LNAs) using 0.35 μm CMOS technology. The ICs feature on-chip matching to 50 Ω, differential operation, and open drain output buffers. A return loss of better than -15 dB was achieved for both amplifiers. LC parallel resonant loads were used to form the gain peak. The LNAs had a measured noise figure of 4 to 5 dB, at VSS=3.3 V |
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