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Effects of raw materials on microstructure and dielectric properties of PbZrO3 antiferroelectric thin films prepared via sol-gel process |
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| Authors: | Yunying LiuXihong Hao Jing ZhouJinbao Xu Shengli An |
| Affiliation: | a School of Chemistry and Chemical Engineering, Inner Mongolia University of Science and Technology, Baotou 014010, China b School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010, China c State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China d Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China |
| Abstract: | In this work, we report on two kinds of PbZrO3 (PZO) antiferroelectric (AFE) thin films with a thickness of about 700 nm, which were fabricated by using zirconium isopropoxide and zirconium nitrate as starting materials, respectively. The effects of the raw materials on microstructure and electrical properties of the PZO AFE films were studied in detail. X-ray diffraction and scanning electron microcopy results showed that the PZO films obtained from zirconium isopropoxide were highly (1 1 1)-oriented and had a more uniform surface microstructure. As a result, the PZO films from zirconium isopropoxide accordingly displayed better electrical properties, such as lager dielectric constant, increased saturated polarization, and smaller leakage current. |
| Keywords: | Electronic materials Chemical synthesis Microstructure Dielectric response |
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